Publication | Closed Access
Effects of post deposition annealing atmosphere on interfacial and electrical properties of HfO2/Ge3N4 gate stacks
14
Citations
32
References
2019
Year
Materials EngineeringMaterials ScienceElectrical EngineeringHfo2/ge3n4 Gate StacksEngineeringNanoelectronicsBias Temperature InstabilityApplied PhysicsPost DepositionSemiconductor Device FabricationMolecular Beam EpitaxyMicroelectronicsElectrical PropertiesSemiconductor Device
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