Publication | Open Access
Influence of Device Structure on the Transient and Steady State Characteristics of LIGT.
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1987
Year
EngineeringSteady State CharacteristicsDevice StructureDrain JunctionPower ElectronicsPhotovoltaicsSemiconductor DeviceNanoelectronicsElectron ExtractionElectrical EngineeringBias Temperature InstabilityLithium-ion BatteryPower Semiconductor DeviceEnergy StorageMicroelectronicsPower DeviceLi-ion Battery MaterialsApplied PhysicsBatteries
The transient and steady state characteristics of the LIGT have been studied for several variations of the device structure and compared with that of LDMOS. The structural variations include combinations of n+ and p+ drain diffusions that clamp the drain junction as well as provide an effective resistive path for electron extraction at turn off. For the same breakdown voltage as LDMOS (500 volts) almost an order of magnitude reduction in ON resistance is observed in all the structures at high current. However, the switching turn OFF time is found to vary according to the efficiency of the minority carrier extraction process. The application of LIGT's in Power Integrated Circuits is also discussed.