InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure

Abstract

We report on a resonant tunneling diode (RTD) photodetector using type-II InAs/GaSb superlattices with an InAs/AlSb double barrier structure. At 80 K, the maximum response of the detector is at about 4.0 μm and the 50% cutoff wavelength is 4.8 μm. The resonant tunneling mechanism is confirmed by observing the negative differential resistance (NDR) phenomenon. The detector is also tested under illumination by a laser with a wavelength of 3.3 μm. A significant photocurrent and NDR peak shift are observed when changing the laser illumination power. The internal multiplication factor, which means how many excess electrons can be triggered by one absorbed photon, is estimated to be 1.01 × 105 at 4.9 V and is 1.90 × 103 at 1.4 V.