Publication | Closed Access
Two-dimensional organic–inorganic hybrid perovskite field-effect transistors with polymers as bottom-gate dielectrics
62
Citations
52
References
2019
Year
EngineeringOrganic ElectronicsHalide PerovskitesSemiconductor MaterialsOptoelectronic DevicesSemiconductor DeviceNanoelectronicsElectronic EngineeringHybrid MaterialsGate Dielectric LayersMaterials ScienceSemiconductor TechnologyElectrical EngineeringInorganic ElectronicsOrganic SemiconductorSemiconductor Device FabricationApplied PhysicsBottom-gate DielectricsFunctional Materials
High-performance bottom-gate 2D-layered (PEA)<sub>2</sub>SnI<sub>4</sub> field-effect transistors have been fabricated using PVA/CL-PVP as gate dielectric layers.
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