Analysis of Fe(Se,Te) Films Deposited On Unbuffered Invar 36

Abstract

In this paper, the feasibility of producing Fe(Se,Te)-coated conductors on cost-effective, unbuffered Invar 36 substrates is studied. A suitable substrate with a sharp {001}<;100> texture and a misorientation angle lower than 10° was developed, and the possibility of growing epitaxial thin films without any buffer layer was demonstrated. It was also shown that the presence of a Fe(Se,Te) seed layer can improve the in- and out-of-plane orientation of the film. A high-resolution scanning electron microscopy study was performed, and the absence of a superconducting transition has been attributed to Ni poisoning based on X-ray microanalysis.