Barrier engineering for HgCdTe unipolar detectors on alternative substrates

References

Page 1

	Year	Citations
AIP Conference Proceedings T Arturo Fernández conference Artificial IntelligenceAip Conference ProceedingsEngineeringSystems EngineeringAi Integration	2006	5.2K
Recent progress in infrared detector technologies Antoni Rogalski Infrared Physics & Technology EngineeringPhysicsInfrared SensorInfrared TechnologySpectroscopy	2011	544
"XB n " barrier photodetectors for high sensitivity and high operating temperature infrared sensors P. C. Klipstein Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Wide-bandgap SemiconductorEngineeringBarrier PhotodetectorBarrier PhotodetectorsPhotoelectric Sensor	2008	202
128 × 128 long-wavelength/mid-wavelength two-color HgCdTe infrared focal plane array detector with ultralow spectral cross talk Weida Hu, Zhenhua Ye, Lei Liao, Optics Letters Short Wavelength OpticOptical MaterialsEngineeringOptoelectronic DevicesIntegrated Circuits	2014	186
Minority carrier lifetime in mercury cadmium telluride V. C. Lopes, A. J. Syllaios, M C Chen Semiconductor Science and Technology Materials ScienceDislocation DensitiesIi-vi SemiconductorSemiconductor TechnologyEngineering	1993	180
Mid-wave infrared HgCdTe nBn photodetector Anne M. Itsuno, Jamie Phillips, Silviu Velicu Applied Physics Letters EngineeringOptoelectronic DevicesSemiconductor DeviceSemiconductorsPlanar Mid-wave Infrared	2012	142
Barrier infrared detectors Piotr Martyniuk, M. Kopytko, Antoni Rogalski Opto-Electronics Review Wide-bandgap SemiconductorOptical MaterialsEngineeringHgcdte Barrier DetectorsSemiconductors	2014	140
Design and Modeling of HgCdTe nBn Detectors Anne M. Itsuno, Jamie Phillips, Silviu Velicu Journal of Electronic Materials Electrical EngineeringEngineeringRadiation DetectionElectronic EngineeringInstrumentation	2011	71
Trapping effects in HgCdTe Y. Nemirovsky, R. Fastow, M. Meyassed, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1991	71
AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications Chanh Nguyen, Takyiu Liu, M. Chen, IEEE Electron Device Letters Novel Base-collector DesignElectrical EngineeringEngineeringRf SemiconductorNew Collector Design	1996	63

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