Improvement of Conversion Loss of Resistive Mixers Using Bernal-Stacked Bilayer Graphene

Abstract

In this letter, we present dual-gate Bernal-stacked bilayer graphene FETs which are used for gate-pumped resistive mixers. The results show that the conversion loss improves when the device on/off ratio increases. At 2 GHz, a record conversion loss of 12.7 dB has been obtained from 0.16 μm device among graphene resistive mixers. Furthermore, more than 10 dB change of conversion loss has been obtained by adjusting the electric displacement field by dual-gate Voltages. Finally, the high temperature characteristics of this type of graphene mixer exhibit excellent thermal stability with only 2 dB degradation in conversion loss from 300 to 380 K. This result shows that the Bernal-stacked bilayer graphene mixer is promising for low-loss and high-temperature radio frequency circuit applications.