Single‐Cell Stateful Logic Using a Dual‐Bit Memristor

Abstract

By combining the functions of Boolean gates and non‐volatile memory, stateful logic may enable significant savings in time and energy for computational processes that can be performed directly in main memory and for data analyses in edge environments. A simple reduction to practice this concept is demonstrated by Borghetti et al. in 2010 via a material implication logic gate comprising two parallel memristors and a conditional write operation. Here, a single physical dual‐bit memristor, possessing both bipolar and unipolar resistance switching characteristics and utilizing their operations, is demonstrated. This device responds to a conditional write to perform not only implication but multiple other logic functions when configured with a series resistor and addressed with a specific voltage pulse. The simple circuit structure of this dual‐bit memristor allows compact sequential logic cascading along the time dimension without a concern of multiple cell accessing related issues. The sequence of implementing a full‐adder is also discussed.