DC-170 GHz Characterization of 22nm FDSOI Technology for Radar Sensor Applications

Abstract

The high frequency performance of fully wired 22nm FDSOI n- and p- MOSFETs was measured for the first time up to 170 GHz and 125 °C. Record MAG of 8 and 7 dB, respectively, is reported for n- and p-MOSFETs at 170 GHz, higher than for any other MOSFET technology, and comparable or higher than that of the best SiGe HBTs. Moreover, gm, MAG, f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> , and f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> improve monotonically as the gate length is reduced from 80 to 20 nm, and degrade by only 10-15% from 25 to 125 °C. Novel 4-terminal varactors and series-stacked n-MOSFET cascodes with back-gate control were also characterized to assess their application in VCOs, power amplifiers, single-transistor mixers and modulators. An output power of 14 dBm with 12% peak PAE and 24% drain efficiency were measured for 3- and 4-stack cascode test structures at 80 GHz, without any output matching network.