Coherent Control of Defect Spins in Silicon Carbide above 550 K

Abstract

Divacancy defects in SiC have emerged as a promising platform for optically active spin-based quantum technologies, yet little is known about their spin properties at high temperatures. The authors demonstrate coherent control of these spins above 550 K, finding a polynomial temperature dependence of zero-field splitting, and a spin coherence time that decreases with increasing temperature. They further demonstrate thermal sensing at about 450 K. This understanding of defect-based spin dynamics in SiC promotes its use in broad-temperature-range quantum sensing.