Publication | Closed Access
A study of GaN nucleation and coalescence in the initial growth stages on nanoscale patterned sapphire substrates <i>via</i> MOCVD
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Citations
32
References
2018
Year
Materials ScienceWide-bandgap SemiconductorEngineeringSapphire SubstratesCrystalline DefectsPhysicsNanotechnologySurface ScienceApplied PhysicsGan NucleationAluminum Gallium NitrideGan Power DeviceGallium OxideCategoryiii-v SemiconductorInitial Growth Stages
A study of GaN nucleation and coalescence behaviors in the initial growth stages on nanoscale patterned sapphire substrates (NPSS) is presented.
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