Method for direct observation of Bloch oscillations in semiconductors

Abstract

We propose a scheme for real-time observations of Bloch oscillations in semiconductors using time-resolved band gap emission spectroscopy. By solving the time-dependent Schrödinger equation, we find one remarkable band gap emission besides the normal high harmonics generated in the interaction of a mid-infrared laser pulse and a semiconductor. It is shown that the band gap emission yield is directly connected to the population in the conduction band (CB). By adopting a pump-probe scheme, the time-dependent population in the CB, that is the dynamical Bloch oscillation, can be probed by measuring the band gap emission signal versus pump-probe delay. We also present a model based on accelerated Bloch states to explain the time-resolved measurement of dynamical Bloch oscillation.