PtSe ₂ /graphene hetero-multilayer: gate-tunable Schottky barrier height and contact type

Abstract

Abstract Graphene-based two-dimensional hybrid materials are attracting significant attention because they can preserve novel characteristics of Dirac cone. Here, based on first-principles methods, we focus on the electronic characteristics of PtSe 2 /graphene hetero-multilayer. The negative binding energies indicate that the hybrid materials can be fabricated easily in practice. Also, the n-type Schottky contact is formed and its barrier height is robust to the number of graphene layer. Moreover, the gate-voltage can effectively induce the Schottky barrier transformation from n -type to p -type and contact type transformation from Schottky to Ohmic in the PtSe 2 /graphene hetero-multilayer. Thus, the work demonstrates that the graphene stacking configuration and gate-voltage will tune the electronic characteristics of PtSe 2 /graphene-based nanodevices.