Real-Time Aging Detection of SiC MOSFETs

Abstract

This paper presents a comprehensive study on degradation monitoring of silicon carbide mosfets and proposes an early warning method to detect aging. The proposed plug-in tool can be integrated to smart gate drivers or directly to power converters. During the accelerated aging tests (power cycling within safe operating area), several electrical parameters are monitored to find out critical signatures and precursors of failure. Among those, gate leakage current is identified as the most practical precursor, which exhibits consistent changes in all aged devices and is relatively easy to monitor. Due to its simple scheme and low cost, it can potentially be embedded into commercial gate drivers featuring improved reliability options.