Publication | Closed Access
Type-II InSe/MoSe<sub>2</sub>(WSe<sub>2</sub>) van der Waals heterostructures: vertical strain and electric field effects
64
Citations
52
References
2018
Year
EngineeringOptoelectronic DevicesHeterostructuresSemiconductor DeviceType-ii AlignmentSemiconductorsSemiconductor NanostructuresElectric Field EffectsQuantum MaterialsMaterials ScienceMaterials EngineeringOxide HeterostructuresElectrical EngineeringSemiconductor TechnologyPhysicsTopological HeterostructuresOptoelectronic MaterialsLayered MaterialVan Der WaalsTransition Metal ChalcogenidesElectronic MaterialsVertical StrainCondensed Matter PhysicsApplied PhysicsMultilayer HeterostructuresFuture ApplicationsOptoelectronics
InSe/MoSe<sub>2</sub>(WSe<sub>2</sub>) vdWHs with type-II alignment, effectively tuned by <italic>E</italic>-field and vertical strain, are systematically discussed for future applications in optoelectronic devices.
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