Journal of Materials Chemistry C · 2018 · 183 citations · 31 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsOptoelectronic DevicesOptoelectronic MaterialsPhotodetectorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsHeterojunction DevicesHeterostructure PhotodetectorsHigh PerformancePhotodetectionPhoton AbsorptionSchottky Barrier CharacteristicsSchottky Barrier PhotodetectorsSchottky Photodetectors
In this work, we design and demonstrate a graphene/silicon (Gr/Si) van der Walls (vdW) heterostructure for high-performance photodetectors, where graphene acts as an efficient carrier collector and Si as a photon absorption layer. The Gr/Si heterojunction exhibits superior Schottky diode characteristics with a barrier height of 0.76 eV and performs well as a self-powered detector responding to 532 nm at zero bias.
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