18–31 GHz GaN MMIC LNA using a 0.1 um T-gate HEMT process

Abstract

GaN technology has attracted main attention towards its application to high-power amplifier. Most recently, noise performance of GaN device has also won acceptance. Compared with GaAs LNA, GaN LNA has a unique superiority on power handling. In this work, we report a wideband Silicon-substrate GaN MMIC LNA operating in 18-31 GHz frequency range using a commercial 0.1 um T-Gate HEMT process. The GaN MMIC LNA has an average noise figure of 1.43 dB over the band and a minimum value of 1.27 dB at 23.2 GHz, which can compete with GaAs and InP MMIC LNA. The small-signal gain is between 22 and 25 dB across the band, the input and output return losses of the MMIC are less than -10 dB. The P1dB and OIP3 are at 17 dBm and 28 dBm level. The four-stage MMIC is 2.3×1.0 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> in area and consumes 280 mW DC power. Compared with GaAs and InP LNA, the GaN MMIC LNA in this work exhibits a comparative noise figure with higher linearity and power handling ability.