Wideband AlGaN/GaN HEMT MMIC low noise amplifier

Abstract

A 3-18 GHz AlGaN/GaN high electron mobility transistor low noise amplifier on silicon carbide is reported. The measured gain (S/sub 21/) is 20 dB +/- 2.5 dB between 3-18 GHz. The minimum measured noise figure is 2.4 dB. To the authors knowledge, this is the highest gain reported over multiple octaves up to 18 GHz using GaN technology.