High-hole mobility Si1-Ge (0.1 ≤ x ≤ 1) on an insulator formed by advanced solid-phase crystallization - Concepedia

Concepedia

Publication | Open Access

High-hole mobility Si1-Ge (0.1 ≤ x ≤ 1) on an insulator formed by advanced solid-phase crystallization

DOI Full Paper Access

15

Citations

35

References

2018

Year

Daichi Takahara, Ryota Yoshimine, Takashi Suemasu, Kaoru Toko

Journal of Alloys and Compounds

Materials ScienceEngineeringPhysicsApplied PhysicsCondensed Matter PhysicsAdvanced Solid-phase CrystallizationSiliceneSemiconductor MaterialSilicon On InsulatorEpitaxial GrowthHigh-hole Mobility Si1-ge

References

	Year	Citations

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