A 600V high-side gate drive circuit with ultra-low propagation delay for enhancement mode GaN devices

Abstract

Benefit from the presented new Common Mode Dual-Interlock (CMDI) structure, a 600V high-side gate driver base on norma 0.5μm 600V Bipolar-CMOS-DMOS (BCD) technology achieving the high dV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</sub> /dt noise immunity larger than 85V/ns and low propagation delay less than 22ns for enhancement mode gallium nitride (GaN) devices is proposed in this paper.