Growth of Centimeter‐Scale Monolayer and Few‐Layer WSe₂ Thin Films on SiO₂/Si Substrate via Pulsed Laser Deposition

Abstract

Abstract To date, the fabrication of highly uniform large‐scale monolayer and few‐layer p‐type WSe 2 throughout the entire substrate, especially on SiO 2 /Si substrates is significantly challenging and one of the most important issues. Here, the fabrication of highly uniform monolayer and few‐layer WSe 2 thin films on a centimeter‐scale SiO 2 /Si substrate via pulsed laser deposition is reported. The number of WSe 2 layers and the thickness, controlled by varying the number of laser pulses, is determined by transmission electron microscopy analysis. The high uniformity of the as‐grown WSe 2 thin film on the entire SiO 2 /Si substrate is verified by the uniform Raman peak position and intensity, estimated by Raman mapping. Using a conventional photolithography process, field effect transistors based on the as‐grown WSe 2 thin films are fabricated and their electrical characteristic is analyzed.