Publication | Closed Access
Realizing high performance n-type PbTe by synergistically optimizing effective mass and carrier mobility and suppressing bipolar thermal conductivity
247
Citations
55
References
2018
Year
Point DefectsEngineeringCarrier MobilityEffective MassSemiconductor DeviceSemiconductorsQuantum MaterialsN-type Pbte–mnteBipolar Thermal ConductivityMaterials ScienceMaterials EngineeringElectrical EngineeringPhysicsBias Temperature InstabilitySemiconductor MaterialSolid-state PhysicBand StructureApplied PhysicsCondensed Matter Physics
Synergistically optimizing the band structure and introducing point defects lead to remarkably high <italic>ZT</italic> in n-type PbTe–MnTe.
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