Publication | Closed Access
Phosphorene/ZnO Nano‐Heterojunctions for Broadband Photonic Nonvolatile Memory Applications
118
Citations
43
References
2018
Year
EngineeringInorganic PhotochemistryEnergy EfficiencyPhoto-electrochemical CellOptoelectronic DevicesChemistryPhosphorene/zno Nano‐heterojunctionsData StoragePhotoelectrochemistryPhosphoreneNanophotonicsOxygen Vacancy FilamentPhotochemistryNanotechnologyOxide ElectronicsPhotonic MaterialsOptoelectronic MaterialsUpconversion LuminescenceApplied PhysicsQuantum Photonic DeviceOptoelectronics
High‑performance photonic nonvolatile memory that combines photosensing and data storage with low power consumption enhances computer system energy efficiency. This study reports the first in‑situ synthesis of phosphorene/ZnO hybrid heterojunction nanoparticles and their use in broadband‑response photonic nonvolatile memory. Broadband resistive switching is driven by enhanced photon harvesting, rapid exciton separation, and oxygen‑vacancy filament formation, while superior antioxidation arises from fast transfer of phosphorene lone‑pair electrons. The device exhibits broadband response from 380 nm to 785 nm with controllable SET voltage shifts, excellent air‑stable performance compared with pristine phosphorene memories, and its unique phosphorene/ZnO nano‑heterojunction assembly paves the way for multifunctional broadband data‑storage techniques.
High-performance photonic nonvolatile memory combining photosensing and data storage with low power consumption ensures the energy efficiency of computer systems. This study first reports in situ derived phosphorene/ZnO hybrid heterojunction nanoparticles and their application in broadband-response photonic nonvolatile memory. The photonic nonvolatile memory consistently exhibits broadband response from ultraviolet (380 nm) to near infrared (785 nm), with controllable shifts of the SET voltage. The broadband resistive switching is attributed to the enhanced photon harvesting, a fast exciton separation, as well as the formation of an oxygen vacancy filament in the nano-heterojunction. In addition, the device exhibits an excellent stability under air exposure compared with reported pristine phosphorene-based nonvolatile memory. The superior antioxidation capacity is believed to originate from the fast transfer of lone-pair electrons of phosphorene. The unique assembly of phosphorene/ZnO nano-heterojunctions paves the way toward multifunctional broadband-response data-storage techniques.
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