Nanoscale · 2018 · 58 citations · 51 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsMaterials PhysicsElectronic Band StructureGraphene NanomaterialsSemiconductor NanomaterialsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBand GapCarrier MobilityCharge Carrier MobilityCircular DichroismDirect Band GapGrapheneGraphene MaterialsValleys
The two-dimensional (2D) hybrid structures of boron nitride (BN) and graphene with properties superior to the individuals are long desired. In this work, we demonstrate theoretically that this goal can be reached in a new graphene-like borocarbonitride (g-BC6N) whose domain has been synthesized in recent experiments. It has a direct band gap of 1.833 eV and a high carrier mobility comparable to that of black phosphorene. The inversion symmetry breaking in g-BC6N leads to a pair of inequivalent valleys with opposite Berry curvatures in the vicinities of the vertices (K and K') of the Brillouin zone. The coexistence of valley-selective circular dichroism and high carrier mobility in g-BNC6 is beneficial to realize the valley Hall effect. We also propose a tight-binding (TB) model to describe the intrinsic features of this type of lattice, revealing a new class of 2D valleytronic materials.
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Generalized Gradient Approximation Made Simple
John P. Perdew, Kieron Burke, Matthias Ernzerhof · Physical Review Letters · 1996 · 211.5K citations · Full text
Natural Sciences, Chemistry, Physics +16