A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations

Roy Dagher, E. Blanquet, Christian Chatillon, Timotée Journot, Marc Portail, Luan Nguyen, Y. Cordier, Adrien Michon

CrystEngComm · 2018 · 14 citations · 26 references

Concepts

Abstract

Thermodynamic simulations of SiC hydrogen annealing illustrating the impossibility of graphene formation due to the high pressure of C–H gases.

References

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