Harvesting Electromagnetic Energy in the <inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>-Band Using a Rectenna Formed by a Bow Tie Integrated With a 6-nm-Thick Au/HfO₂/Pt Metal–Insulator–Metal Diode

Abstract

In this paper, the first demonstration of a bow-tie antenna integrated with a metal-insulator-metal (MIM) diode for electromagnetic energy harvesting in the V-band (i.e., 40-75 GHz) is presented. We have designed, simulated, fabricated, and fully characterized a 60-GHz rectifying antenna (rectenna) based on a vertical Au-HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -Pt MIM diode with reduced differential resistance. The dielectric used for the MIM structure is a 6-nm-thick amorphous HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> grown by atomic layer deposition. For the fabricated MIM device, we report here a current density of 3 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> that exceeds the previous values presented in the literature. The vertical MIM-based rectenna is able to efficiently harvest up to 250 μV from an impinging modulated millimeter-wave signal with -20 dBm of available power, thus offering a voltage responsivity of over 5 V/W. The reported results indicate that the proposed approach is well suited for future low-power solutions much sought after for the energetically autonomous 5G terminal equipment.