Advanced Materials Interfaces · 2018 · 17 citations · 38 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMaterials ChemistrySemiconductor MaterialsCrystal ChemistryEpitaxial GrowthOrganic Electronic MaterialsOrganic SemiconductorsSemiconductor HeterostructuresSemiconductor SurfacesCrystallinityCrystallinity AnalysisCrystallinity ChangesEpitaxial Film GrowthEpitaxial Growth KineticsEpitaxial OverlayersHeteroepitaxyTemperature-dependent Growth
Abstract Heteroepitaxy of one material onto another molecular single crystal surface is one promising route for resolving questions about formation criteria of molecular heterojunction structures as well as for the development of next‐generation organic electronic devices allowing efficient intermolecular charge carrier exchange. In the present work, the in‐plane and out‐of‐plane crystallinity of an epitaxial molecular p–n heterojunction, C 60 (acceptor) overlayers formed on the single crystal surface of pentacene (donor), and its evolution, depending on the growth temperature, are systematically elucidated. It is demonstrated that the crystallinity of the C 60 on pentacene is dominated by the temperature during the growth rather than the postannealing of the sample. The mean crystallite size in the in‐plane directions grows from 50 to 150 nm proportionally to the growth temperature in a range of 125–370 K. The present results suggest that the formation mechanisms of the C 60 /pentacene heterojunction are kinetically controlled, by diffusion processes at the molecular interface, rather than by the thermal equilibrium conditions.
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Organic single-crystal field-effect transistors
R. W. I. de Boer, M. E. Gershenson, Alberto F. Morpurgo et al. · physica status solidi (a) · 2004 · 561 citations · Full text
Observation of long-range exciton diffusion in highly ordered organic semiconductors
Hikmat Najafov, B. Lee, Qibin Zhou et al. · Nature Materials · 2010 · 528 citations