Publication | Closed Access
2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics
387
Citations
341
References
2018
Year
EngineeringTwo-dimensional MaterialsLow Dimensional MaterialOptoelectronic DevicesHeterostructuresSemiconductor NanostructuresSemiconductorsElectronic DevicesPhotodetectorsCompound SemiconductorMaterials ScienceOxide HeterostructuresOptoelectronic MaterialsLayered MaterialValley PolarizationElectronic MaterialsApplied PhysicsMultilayer HeterostructuresLayered MaterialsMechanical TransferOptoelectronics
Van der Waals heterostructures based on 2D layered materials enable atomic‑scale integration and promise novel physics and versatile optoelectronic devices such as LEDs, photodetectors, and modulators. The article reviews current research on 2D vdWHs and their optoelectronic applications. It outlines fabrication techniques (mechanical transfer, CVD), discusses engineered band alignments, and surveys device implementations in LEDs, photodetectors, and optical modulators. The review concludes with insights and a future outlook for the field.
Abstract Van der Waals heterostructures (vdWHs) based on 2D layered materials with selectable materials properties pave the way to integration at the atomic scale, which may give rise to fresh heterostructures exhibiting absolutely novel physics and versatility. This feature article reviews the state‐of‐the‐art research activities that focus on the 2D vdWHs and their optoelectronic applications. First, the preparation methods such as mechanical transfer and chemical vapor deposition growth are comprehensively outlined. Then, unique energy band alignments generated in 2D vdWHs are introduced. Furthermore, this feature article focuses on the applications in light‐emitting diodes, photodetectors, and optical modulators based on 2D vdWHs with novel constructions and mechanisms. The recently reported novel constructions of the devices are introduced in three primary aspects: light‐emitting diodes (such as single defect light‐emitting diodes, circularly polarized light emission arising from valley polarization), photodetectors (such as photo‐thermionic, tunneling, electrolyte‐gated, and broadband photodetectors), and optical modulators (such as graphene integrated with silicon technology and graphene/hexagonal boron nitride (hBN) heterostructure), which show promising applications in the next‐generation optoelectronics. Finally, the article provides some conclusions and an outlook on the future development in the field.
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