Silver Nanowire Mesh-Based Fuse Type Write-Once-Read-Many Memory

Abstract

Fuse type write-once-read-many (WORM) memories are fabricated based on silver nanowire (AgNW) meshes using simple dispensing and bar-coating processes without needing precise patterning. Compared to previous work, the AgNW mesh WORM memories can be programmed at lower voltage (2.3 V) and current (<;10 mA), and thus through near field communication by smart phones. The devices present stable “unwritten” and “written” states for reading operations of 6000 times. Finally, 4-bit WORM memories are fabricated and attached on a packaging box with programming and reading operations by a smart phone to verify its potential for practical applications.