Solution-processed ternary alloy aluminum yttrium oxide dielectric for high performance indium zinc oxide thin-film transistors

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Kenji Nomura, Hiromichi Ohta, Akihiro Takagi et al. · Nature · 2004 · 7.3K citations

Materials Science, Room-temperature Fabrication, Electrical Engineering +8

Band gaps and electronic structure of transition-metal compounds

J. Zaanen, G. A. Sawatzky, J. W. Allen · Physical Review Letters · 1985 · 3K citations · Full text

Metal Chain Compound, Transition Metal Chalcogenides, Engineering +14

High dielectric constant gate oxides for metal oxide Si transistors

John Robertson · Reports on Progress in Physics · 2005 · 1.7K citations

Oxide Heterostructures, Materials Science, Electrical Engineering +15

High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

Hai Q. Chiang, John F. Wager, Randy Hoffman et al. · Applied Physics Letters · 2004 · 784 citations

Materials Science, Electrical Engineering, Semiconductor Device +14

Hydration of γ-Alumina in Water and Its Effects on Surface Reactivity

Grégory Lefèvre, Myriam Duc, Patrick Lepeut et al. · Langmuir · 2002 · 239 citations

Engineering, Chemistry, Mineral Processing +16