Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity

Abstract

Oxide semiconductors are desirable for large-area and/or flexible electronics. Here, we report highly optimized complementary inverters based on n-type indium–gallium–zinc oxide and p-type tin monoxide thin-film transistors. Oxide-based inverters with a record voltage gain of 142 have been achieved. The switching point voltage has also been tuned to reach the ideal value, namely half value of the supply voltage. A narrow transition width of 1.04 V (13% of the supply voltage) is achieved which offers a strong anti-jamming ability to avoid logic errors. Rail-to-rail output voltage swing has been achieved. The inverters still maintain high performance at a low supply voltage of 6 V. A very large number of inverters have been fabricated and showed excellent uniformity in a working area of 1 cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times $ </tex-math> </inline-formula> 1 cm. The switching point voltage and transition width show very small standard deviations of only 0.55% (0.022 V) and 2.3% (0.024 V), respectively, demonstrating promises for large-scale circuit integration.