Strain-Mediated Spin-Orbit-Torque Switching for Magnetic Memory

Abstract

Spin-orbit torque (SOT) allows energy-efficient control of magnetism for nonvolatile digital memory. However, deterministic perpendicular switching requires lateral symmetry breaking, and remains a challenge in SOT devices. Here a mechanism for deterministic perpendicular switching is simulated, showing that uniaxial anisotropies like strain-induced magnetoelastic anisotropy can break a system's lateral symmetry and yield field-free switching in SOT devices. This method for electric field control of magnetism may inspire next-generation memory devices such as magnetic random-access memory (MRAM).