Breakthrough of selector technology for cross-point 25-nm ReRAM

Abstract

In this paper, the authors report for the first time the outstanding selector performance from an innovative oxide selector. SiO2, one of conventional and common materials in semiconductor industry, was chosen as a matrix oxide material. Metal atoms which are non-mobile and easy to handle were injected into the oxide films. Off-current and threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) could be controlled by using arsenic (As), which doping method and concentration were carefully investigated to achieve threshold switching behavior. Finally ReRAM (Resistance switching Random Access Memory) cell array consisted of one selector-one resistor (1S1R) was successfully demonstrated with the full integration of the newly developed selector.