Publication | Closed Access
Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2−x thin films deposited at room temperature
22
Citations
27
References
2018
Year
Materials ScienceRoom TemperatureEngineeringOxide ElectronicsApplied PhysicsCeo2−x Thin FilmsSemiconductor MaterialThin Film Process TechnologyThin FilmsOxygen Pressure RatioThin Film Processing
| Year | Citations | |
|---|---|---|
Page 1
Page 1