Publication | Closed Access
Threshold voltage tuning in AlGaN/GaN HFETs with p-type Cu2O gate synthesized by magnetron reactive sputtering
19
Citations
25
References
2017
Year
Wide-bandgap SemiconductorElectrical EngineeringEngineeringMagnetron Reactive SputteringNanoelectronicsApplied PhysicsThreshold VoltageAluminum Gallium NitrideGan Power DeviceP-type Cu2o GateMicroelectronicsCategoryiii-v SemiconductorSemiconductor Device
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