Binuclear Phthalocyanine Dimer‐Containing Yttrium Double‐Decker Ambipolar Semiconductor with Sensitive Response toward Oxidizing NO₂ and Reducing NH₃

Abstract

Abstract A thin‐film transistor fabricated from a binuclear phthalocyanine dimer‐containing yttrium double‐decker complex [{Pc(OC 4 H 9 ) 8 }Y{BiPc(OC 4 H 9 ) 12 }Y{Pc(OC 4 H 9 ) 8 }] by using the quasi–Langmuir–Shäfer technique exhibits good ambipolar organic field‐effect transistor (OFET) device performance with carrier mobilities of 2.3 and 0.8 cm 2 V −1 s −1 for electrons and holes, respectively. These represent the highest mobilities achieved so far for solution‐processed small‐molecule single‐component‐based ambipolar OFET devices. The ambipolar semiconducting nature of this compound was further confirmed in an unambiguous manner by the high sensitive response of the device towards both oxidizing NO 2 gas and reducing NH 3 gas in the concentration range of approximately 0.5–3 ppm and 7.5–20 ppm, respectively, at room temperature.