Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WOx) films and its MIS structure of Cu/Zr–WOx/p-Si Schottky barrier diodes - Concepedia

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Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WOx) films and its MIS structure of Cu/Zr–WOx/p-Si Schottky barrier diodes

58

Citations

40

References

2017

Year

R. Marnadu, J. Chandrasekaran, M. Raja, M. Balaji, V. Balasubramani

Journal of Materials Science Materials in Electronics

Materials ScienceMaterials EngineeringSemiconductor TechnologyEngineeringOxide ElectronicsApplied PhysicsSemiconductor MaterialOptoelectronic DevicesThin FilmsZr ContentMis Structure

References

	Year	Citations

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