Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues - Concepedia

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Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues

25

Citations

29

References

2017

Year

A. M. Mizerov, A. V. Redkov, S. N. Timoshnev

Thin Solid Films

Polarity IssuesElectrical EngineeringEngineeringThin Gan FilmsApplied PhysicsAluminum Gallium NitrideGan Power DeviceMolecular Beam Epitaxy

References

	Year	Citations

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