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The role of indium composition on thermo-electric properties of InGaN/GaN heterostructures grown by MOCVD

Materials ScienceMaterials EngineeringElectrical EngineeringIngan/gan HeterostructuresEngineeringWide-bandgap SemiconductorApplied PhysicsAluminum Gallium NitrideGan Power DeviceGallium OxideIndium CompositionThermo-electric PropertiesCategoryiii-v SemiconductorOptoelectronics