Applied Physics Letters · 2017 · 14 citations · 27 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsInfrared DetectorsNanoelectronicsNanowiresOptoelectronic DevicesPhotodetectorsSemiconductor NanomaterialsExternal Quantum EfficiencyInfrared PhotodetectorsNanowire DevicesPhotodetectionQuantum EfficiencySemiconductor NanowiresSilicon NanowiresSpectral Response Characterization
Silicon nanowires were etched vertically in the channel between asymmetrical interdigital electrodes. The self-powered near-infrared photodetector consists of a planar structure of Au-vertically aligned Si nanowire-Ti. The devices were characterized by measuring the current-voltage characteristics, the external quantum efficiency (EQE), and the spectral response. An enhancement of 32% in the short-circuit current was achieved after applying the Si nanowires. The EQE of the device with Si nanowires consists of a strong peak covering the near-infrared spectral range with a maximum EQE of 10.3% at 965 nm and 0 V. Furthermore, the spectral response measurements showed enhancement and broadening in the spectrum of devices with Si nanowires.
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