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Effect of annealing on chemical, structural and electrical properties of Au/Gd2O3/n-GaN heterostructure with a high-k rare-earth oxide interlayer

Materials EngineeringMaterials ScienceElectrical EngineeringAu/gd2o3/n-gan HeterostructureEngineeringNanoelectronicsSurface ScienceApplied PhysicsAluminum Gallium NitrideGan Power DeviceGallium OxideMultilayer HeterostructuresCategoryiii-v SemiconductorElectrical Properties