6.5% Certified Efficiency Sb₂Se₃ Solar Cells Using PbS Colloidal Quantum Dot Film as Hole-Transporting Layer

Abstract

Sb 2 Se 3 is a promising candidate for thin-film photovoltaics, with a suitable band gap, benign grain boundaries, Earth-abundant and nontoxic constituents, and excellent stability. However, the low doping density (10 13 cm –3 ) of Sb 2 Se 3 absorber and back contact barrier limit its efficiency. Here we introduced a PbS colloidal quantum dot (CQD) film as the hole-transporting layer (HTL) to construct a n-i-p configured device and overcame these problems. Through simulation-guided optimization, we have significantly improved the efficiency of a Sb 2 Se 3 thin-film solar cell to a new certified record of 6.5%. The PbS CQD HTL not only minimized carrier recombination loss at the back contact and boosted carrier collection efficiency but also contributed photocurrent by its own near-infrared absorption. Furthermore, these n-i-p devices also demonstrated improved device uniformity, achieving 6.39% in a 1.02 cm 2 device.