Progress in the explanation and modeling of the laser-induced damage of edge-isolation processes in crystalline silicon solar cells

Explanation of commonly observed shunt currents in c-Si solar cells by means of recombination statistics beyond the Shockley-Read-Hall approximation

S. Steingrube, Otwin Breitenstein, K. Ramspeck et al. · Journal of Applied Physics · 2011 · 115 citations

Engineering, Srh Recombination, Integrated Circuits +20

Numerical quantification and minimization of perimeter losses in high-efficiency silicon solar cells

Pietro P. Altermatt, Gernot Heiser, Martin A. Green · Progress in Photovoltaics Research and Applications · 1996 · 52 citations

Electrical Engineering, Engineering, Numerical Quantification +13

Interpretation of the Commonly Observed I-V Characteristics of C-SI Cells Having Ideality Factor Larger Than Two

O. Breitenstein, Pietro P. Altermatt, K. Ramspeck et al. · 2006 · 49 citations

Electrical Engineering, Engineering, Physics +9

A theoretical and experimental study of recombination in silicon p−n junctions

P. Ashburn, D. V. Morgan, Michael Howes · Solid-State Electronics · 1975 · 43 citations

Semiconductors, Semiconductor Technology, Engineering +8

Laser-induced defects in crystalline silicon solar cells

Malcolm Abbott, P.J. Cousins, F. Chen et al. · 2005 · 37 citations

Engineering, Laser Material, Silicon On Insulator +18