ACS Applied Materials & Interfaces · 2017 · 18 citations · 39 references
Natural SciencesMaterials EngineeringMaterials ScienceInterface ScienceMaterials PhysicsSurface ScienceInterface EngineeringLaser Surface ProcessingMetal OxidesSurface Chemistry Of SolidsSurface PhysicsSurface ThermodynamicsHeterostructuresInterface FormationOxygen Partial Pressure EffectsPulsed Laser DepositionSurface Formation MechanismsSurface TerminationTermination ConditionsTermination Sequences
With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface atomic stacking sequences. Here, taking the prototypical SrRuO 3 /BaTiO 3 /SrRuO 3 (SRO/BTO/SRO) heterostructure as a model system, we investigated the formation of different interfacial termination sequences (BaO–RuO 2 or TiO 2 –SrO) with oxygen partial pressure ( P O 2 ) during PLD. We found that a uniform SrO–TiO 2 termination sequence at the SRO/BTO interface can be achieved by lowering the P O 2 to 5 mTorr, regardless of the total background gas pressure ( P total ), growth mode, or growth rate. Our results indicate that the thermodynamic stability of the BTO surface at the low-energy kinetics stage of PLD can play an important role in surface/interface termination formation. This work paves the way for realizing termination engineering in functional oxide heterostructures.
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