Exciton-polariton light-emitting diode based on a ZnO microwire

Abstract

Room temperature electrically pumped exciton-polariton light-emitting diode (LED) based on the n-ZnO microwire/MgO/p-GaN heterojunction was fabricated. With the injection current of 1.5 mA, the ultraviolet electroluminescence centered at wavelength of 400 nm is obtained. The whispering gallery cavity model combined with the coupling oscillator model is used to describe the emission intensity modulation, from which the strong coupling regime of the system is proved to be surviving at room temperature.