All-optical measurements of carrier dynamics in bulk-GaN LEDs: Beyond the ABC approximation

Abstract

An all-optical measurement of differential carrier lifetimes is performed in a specially designed single-quantum-well structure. The measurement reveals the complex carrier-dependence of radiative and non-radiative recombinations, which directly manifest wavefunction-overlap and field-screening effects. This analysis clarifies the range of applicability of the common ABC model and its limitations.