Gate Driver Based on a-Si:H Thin-Film Transistors With Two-Step-Bootstrapping Structure for High-Resolution and High-Frame-Rate Displays

Abstract

This brief develops a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver with short rising and falling times. The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. The measured rising time, falling time, and voltage swing of the output waveform are <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.05~\mu$ </tex-math></inline-formula> s, 1.31 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu$ </tex-math></inline-formula> s, and 27.1 V, respectively, after an accelerated lifetime test at 70 °C for 120 h.