Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks - Concepedia

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Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

65

Citations

32

References

2017

Year

Juan Gao, Gang He, Dongqi Xiao, Peng Jin, Shanshan Jiang, Wendong Li, Shuang Liang, Li Zhu

Journal of Material Science and Technology

Electrical EngineeringEngineeringNanoelectronicsSurface ScienceApplied PhysicsGe SurfaceHftio/ge Gate StacksMicroelectronicsElectrical Properties

References

	Year	Citations

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