Optica · 2017 · 197 citations · 74 references
EngineeringMaterials EngineeringMaterials ScienceOptical MaterialsOpticsPhotonicsIntegrated PhotonicsOptical ResonatorsOptical WaveguidesPhotonic Integrated CircuitsPhotonic MaterialsSilicon PhotonicsFabricationFabrication TechniquesMicroring ResonatorsOptical Parametric OscillationOptical Parametric OscillatorsPropagation LossSilicon DioxideWaveguide Loss
Broadband mid‑IR spectroscopy would benefit from silicon photonics, yet the platform’s reliance on silicon dioxide cladding limits transparency, and alternative claddings have been studied but still struggle to reduce losses without complex fabrication. The study demonstrates that silicon photonics can achieve low‑loss propagation in the 3–6 µm mid‑IR range, challenging prior assumptions. We engineer the waveguide cross‑section and mode interaction with the absorptive cladding oxide to reduce loss at mid‑IR wavelengths. The fabricated microring resonator achieved an intrinsic Q of 10^6 between 3.5 and 3.8 µm, the highest reported for an integrated mid‑IR platform, and enabled a low optical parametric oscillation threshold of 5.2 mW, demonstrating the platform’s nonlinear potential.
Broadband mid-infrared (mid-IR) spectroscopy applications could greatly benefit from today’s well-developed, highly scalable silicon photonics technology; however, this platform lacks broadband transparency because of its reliance on absorptive silicon dioxide cladding. Alternative cladding materials have been studied, but the challenge lies in decreasing losses while avoiding complex fabrication techniques. Here, in contrast to traditional assumptions, we show that silicon photonics can achieve low-loss propagation in the mid-IR from 3 to 6 μm wavelength, thus providing a highly scalable, well-developed technology in this spectral range. We engineer the waveguide cross-section and optical mode interaction with the absorptive cladding oxide to reduce loss at mid-IR wavelengths. We fabricate a microring resonator and measure an intrinsic quality (Q) factor of 106 at wavelengths from 3.5 to 3.8 μm. This is the highest Q demonstrated on an integrated mid-IR platform to date. With this high-Q silicon microresonator, we also demonstrate a low optical parametric oscillation threshold of 5.2 mW, illustrating the utility of this platform for nonlinear chip-scale applications in the mid-IR.
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