IEEE Electron Device Letters · 2017 · 108 citations · 12 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesCmos Circuit DesignHigh-frequency Semiconductor DevicesMicrowave FiltersMicrowave Integrated CircuitsMicrowave ResonatorsRadio-frequency Integrated CircuitsBand-pass FiltersBandpass FilteringBandpass FiltersDefected Ground StructuresEquivalent Circuit AnalysisEquivalent Circuit ModelingInsertion LossMicrowave Filter Design
An on-chip bandpass filter (BPF) is designed and fabricated in a 0.13-μm SiGe (Bi)-CMOS technology. This BPF consists of a broadside-coupled meander-line resonator (BCMLR) in conjunction with a defected-ground structure (DGS). By simply grounding a BCMLR, the resonator can be converted into a BPF. Further applying a DGS to this BPF, an additional transmission zero can be generated in the high-frequency band. To understand the fundamentals of this design, an LC-equivalent circuit is given for investigation of the transmission zeros and poles. The measured results show that the BPF has a center frequency at 33 GHz with a bandwidth of 18%. The minimum insertion loss is 2.6 dB, while the maximum stopband attenuation is 44 dB. The chip size, excluding the pads, is only 0.038 mm2 (0.126 × 0.3 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ).
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